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| Semiconductor DP050S PNP Silicon Transistor Features * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.08V Typ. @IC /IB =-100mA/-10mA) * Suitable for low voltage large current drivers * Complementary pair with DN050S * Switching Application Ordering Information Type NO. DP050S Marking P02 Package Code SOT-23F Outline Dimensions 2.40.1 1.60.1 unit : mm 1 2.90.1 1.90 BSC 3 2 0.150.05 0.40.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2116-000 0.90.1 0~0.1 1 DP050S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -500 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat) VBE(sat) fT C ob Test Condition IC=-50A, I E =0 IC=-1mA, IB=0 IE =-50A, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100mA VCE=-1 V, IC =-500mA IC=-100mA, IB =-10mA IC=-100mA, IB =-10mA VCE=-5V, IC =-20mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 200 70 - Typ. 100 8.0 Max. -0.1 -0.1 450 -0.25 -1.2 - Unit V V V A A V V MHz pF KST-2116-000 2 DP050S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE - IC Fig. 4 IC - VCE Fig. 5 VCE(sat) - IC KST-2116-000 3 |
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